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  MLC在工控上應用技術剖析 - DigiTimes電子時報
  
  2012年2月9日 ... 在2X製成的MLC Flash只有5年的Data Retention，但當P/E Cycle到達3,000次後卻僅剩下1年，如圖2所示，這些都是因為Error Bit不斷增加所造成 ...
  
  2024-07-15
  
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  TN-12-30: NOR Flash Cycling Endurance and Data Retention - Micron
  
  Technical Note. NOR Flash Cycling Endurance and Data Retention. Introduction. NOR Flash memory is subject to physical degradation that can lead to device ...
  
  2024-07-11
  
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Understanding MSP430 Flash Data Retention - Texas Instruments

日期：2024-07-14

Application Report. SLAA392 – March 2008. 1. Understanding MSP430 Flash Data Retention. Kripasagar Venkat, Uwe Haensel. MSP430 Applications....

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SSD效能檢測大公開@ Technical Direct

日期：2024-07-16

2010年12月16日 ... 究其原因，一來SSD是以NAND Flash（快閃記憶體）取代傳統硬碟的碟盤 ... 除了上述的這些問題外，NAND Flash在資料保存（Data Retention）上的 ......

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Endurance and Retention in Macronix NOR Flash Memories

日期：2024-07-13

12 Jun 2014 ... NOR Flash memory cells are susceptible to degradation due to ... Program/Erase cycles and data retention in NOR Flash memory will be ......

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Program/Erase Cycling Endurance and Data Retention of Macronix ...

日期：2024-07-14

15 Oct 2014 ... The ability of the Flash memory cells to retain stored information can also be degraded ... Data Retention time in SLC NAND Flash memory....

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Error Analysis and Retention-Aware Error Management for NAND ...

日期：2024-07-16

that retention errors, caused due to flash cells leaking charge over time, are ..... under 10-year data retention time if ECC with 4-bit error correction per. 512 bits is ......

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Practical Guide to Endurance and Data Retention - Spansion

日期：2024-07-15

6 Oct 2010 ... These two parameters are endurance and data retention. .... As illustrated in Table 3.1, data retention in Spansion MirrorBit flash is influenced ......

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The Inconvenient Truths of NAND Flash Memory - Micron

日期：2024-07-12

MLC vs. SLC. – Architecture, Features, and Performance Comparisons. • NAND Error Modes. – Program Disturb. – Read Disturb. – Data Retention. – Endurance....

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Data Remanence in Flash Memory Devices - The Computer ...

日期：2024-07-12

devices, such as UV EPROM, EEPROM or Flash, bits are stored as charge in the ... Data retention time can be used roughly to estimate the data remanence ......

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