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Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath--《半導體
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日期:2024-07-13
高級搜索:用" Schottky barrier Fermi level pinning " 到知網平台檢索,點擊這裡搜索更多... 《半導體學報》 2012年10期 加入收藏 投稿 Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical ......
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日期:2024-07-13
Publication » Fermi-level depinning for low-barrier Schottky source/drain transistors. ... [Show abstract] [Hide abstract] ABSTRACT: Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC,...
IEEE Xplore Abstract - Fermi level depinning at metal-organic semiconductor interface for low-resist
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日期:2024-07-14
This paper presents the direct evidence and successful demonstration of Fermi-level depinning at metal-organic semiconductor (M/O) interfaces by inserting an ultrathin interfacial Si 3 N 4 insulator in between. The contact behavior is tuned from rectifyin...
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorp
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日期:2024-07-10
FIELD OF THE INVENTION The invention relates generally to semiconductor processing and semiconductor devices. More particularly, the invention relates to a process for depinning the Fermi level of a semiconductor at a metal-interface layer-semiconductor ....
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日期:2024-07-08
Skip to main page content HOME CURRENT ISSUE FOCUS ISSUES ARCHIVE COLLECTIONS SUBSCRIBE HELP FEEDBACK Search for Keyword: GO Advanced Search User Name Password Sign In Fermi Level Depinning Failure for Al/GeO 2 /Ge Contacts...
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath - Abs
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日期:2024-07-10
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath Wang Wei (王巍), Wang Jing (王敬), Zhao Mei (赵梅), Liang Renrong (梁仁荣) and Xu Jun (许军) Show affiliations Tag this article Full text PDF (2.38 MB) ......
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日期:2024-07-13
We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous ( NH 4 ) 2 S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming th...
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日期:2024-07-11
Fermi-level depinning for low-barrier Schottky source/drain transistors Rent: Rent this article for USD Buy: USD28.00 10.1063/1.2159096 Daniel Connelly 1,a), Carl Faulkner 1, P. A. Clifton 1 and D. E. Grupp 1 Scitation Author Page PubMed Google Scholar 1 ...