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瀏覽:385
日期:2024-07-11
We demonstrate the depinning of Fermi level on both p- and n-type germanium
after sulfur passivation by aqueous ( NH 4 ) 2 S treatment. Schottky contacts ......
瀏覽:1083
日期:2024-07-11
Fermi Level Depinning For the Design of III-V FET Source/Drain Contacts. Jenny
Hu, Ximeng Guan, Donghun Choi, James S. Harris, Krishna Saraswat, and H....
瀏覽:1090
日期:2024-07-08
We successfully demonstrated Schottky barrier height modulation in metal/Ge
Schottky junction by inserting an ultrathin interfacial SiN layer. The SiN layer ......
瀏覽:1389
日期:2024-07-12
We have particularly demonstrated the Fermi level depinning for ferromagnetic
Schottky contact Fe and shown its usefulness for electrical spin injection and ......
瀏覽:725
日期:2024-07-12
ABSTRACT By imposing an ultrathin insulator between low-work function metals
and silicon, the Schottky barrier of the junction can be substantially reduced, ......
瀏覽:770
日期:2024-07-10
Publication » Fermi level depinning in metal/Ge Schottky junction for metal
source/drain Ge metal-oxide-semiconductor field-effect-transistor application....
瀏覽:894
日期:2024-07-07
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a
chemical bath. Wang Wei(王巍), Wang Jing(王敬)О, Zhao Mei(赵梅), Liang ......
瀏覽:1129
日期:2024-07-11
Fermi Level Depinning at Metal-Organic Semiconductor Interface for. Low-
Resistance Ohmic Contacts. Zihong Liu,1* Masaharu Kobayashi,1 Bipul C. Paul,
1, ......