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  Fermi Level Pinning at the PolySi/Metal Oxide Interface C. Hobbs, L. Fonseca, V. Dhandapani, S. Sama
  
  Fermi Level Pinning at the PolySi/Metal Oxide Interface C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White and P. Tobin APR
  
  2024-09-04
  
  瀏覽：1285
- 163.13.111.58
  
  Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface ...
  
  that the Fermi level at the poly-Si interface is pinned above the middle of the poly- Si bandgap.
  
  2024-09-03
  
  瀏覽：798

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Theory of Fermi Level Pinning of High-k Dielectrics - IEEE Xplore

日期：2024-09-01

Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been ......

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Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface ...

日期：2024-09-05

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004. 971. Fermi-Level ......

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Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi leve

日期：2024-09-04

We have studied Fermi level pinning (FLP) of Hf-based high-k gate stacks based on thermodynamics based on an O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium. O exposure to aim O vacancy ......

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Presentation

日期：2024-09-01

Fermi level pinning and mobility degradation. 12. Conclusions. New Materials for the Gate Stack of MOS-Transistors. 2 ......

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Slides

日期：2024-09-02

High threshold voltage because of Fermi level pinning at poly-Si/High-K interface ; Degraded channel carrier mobility....

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IEEE Xplore - Fermi level pinning at the polySi/metal oxide ...

日期：2024-08-30

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IEEE Xplore Abstract - Fermi level pinning at the polySi/metal oxide interface

日期：2024-09-04

We report here for the first time that Fermi pinning at the polySi/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that pinning occurs due to the interfacial Si-Hf and Si-O-Al bonds for HfO/sub 2/ and Al/sub 2/O/su...

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Fermi-Level Pinning at the Poly-Si/HfO2 Interface

日期：2024-09-04

Journal of the Korean Physical Society, Vol. 55, No. 6, December 2009, pp. 2501∼2504 Fermi-Level Pinning at the Poly-Si/HfO 2 Interface Ranju Jung∗ Department of Electrophysics, Kwangwoon University, Seoul 139-701 The high threshold voltage in metal-oxide...

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