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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004 971 Fermi-Level Pinning at the Poly
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日期:2024-08-31
“Fermi-level pinning at the poly-Si–Metal oxide interface,” in Symp. VLSI Tech. Dig., 2003, pp. 9–10. [2] S. Pidin, Y. Morisaki, Y. Sugita, T. Aiyama, K. Irino, T. Nakamura, and T. Sugii, “Low standby power CMOS with HfO gate oxide for 100-nm generation,”...
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日期:2024-09-03
Fermi-Level Pinning at the Poly-Si/HfO 2 Interface Ranju Jung J. Korean Phys.Soc. 55,2501 [doi: 10.3938/jkps.55.2501 | PDF Download] The high threshold voltage in metal-oxide-semiconductor field effecttransistor (MOSFET) devices adopting hafnia for the ga...
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日期:2024-09-03
... high threshold voltages and (2) polysilicon (poly-Si) depletion. Researchers from Freescale Semiconductor together with the Kintech Lab team have investigated the role of the poly-Si–MeO ......
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日期:2024-09-03
ABSTRACT We report here that Fermi pinning at the polysilicon/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that ......
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日期:2024-09-04
Polysilicon depletion effect is the phenomenon in which unwanted variation of ... Proceedings International Symposium: VLSI Technology Systems and Applications. pp. ... "Fermi-level pinning at the polysilicon/metal oxide interface-Part I"....
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日期:2024-08-31
... and P. Tobin, Fermi level pinning at the poly-Si / metal oxide interface, VLSI ... MOSFETs through silicidation induced impurity segregation(SIIS), IEEE Int'l....
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日期:2024-08-30
... Rai, R., Hebert, L., Tseng, H., White, B., and Tobin, P. (2003) Fermi level pinning at the polySi/metal oxide interface. IEEE Symposium on VLSI Technology, p....
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日期:2024-09-06
Developing a systematic approach to metal gates and high-k dielectrics in ..... CC Hobb et al., “Fermi-Level Pinning at the Polysilicon/Metal-Oxide ... Generation Dual Metal CMOS” (paper presented at the International Conference on Integrated ......