search:fermi level pinning effect相關網頁資料

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    日期:2024-07-07
    In solid-state physics, a metal–semiconductor (M–S) junction is a type of junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can ......
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    日期:2024-07-09
    that the Fermi level at the poly-Si interface is pinned above the middle of the poly- Si bandgap....
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    日期:2024-07-11
    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004. 971. Fermi-Level ......
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    日期:2024-07-10
    在metal gate應用上, 什麼是Fermi level pinning effect ? ... Fermi level pinning effect 費米能級的釘扎效應 k介质中费米能级钉扎问题是由栅界面处的Hf-Si键感生的带隙态,或氧空位引起的。...
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    日期:2024-07-13
    Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes Huang-Chun Wen a, g, , , Prashant Majhi b, Kisik Choi a, ......
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    日期:2024-07-12
    The phenomenon of Fermi level pinning naturally led to the idea that the Fermi level at the MS interface is predominantly a property of the semiconductor. A possible explanation of such a result is pinning by defects in the semiconductor. Some structural ...
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    日期:2024-07-07
    Finally, in order to investigate the effects of the crystal and surface quality of the annealed pentacene films on the Fermi level pinning phenomenon, M/P junction diodes were fabricated on the annealed pentacene films with Al and Ti contact metals, and c...
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    日期:2024-07-12
    必應詞典為您提供fermi-level pinning effect的釋義,網路釋義: 費米能階鎖定效應;費米能階釘住效應; ... 1. 費米能階鎖定效應...的熱穩定性(Thermal Stability)、費米能階鎖定效應(Fermi-Level Pinning Effect)、通道內載子移動率的衰減(Mobility Degradation)、......