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日期:2024-07-12
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004. 971. Fermi-Level ......
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日期:2024-07-14
Threshold Voltage Pinning- high-K and Polysilicon gate are incompatible due to
Fermi level pinning at the High-K and Polysilicon interface which causes high ......
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日期:2024-07-09
Electron tunneling is a major concern at this level as it contributes to current
leakage through the gate. Further ... Phonon scattering and Fermi level pinning....
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日期:2024-07-14
fundamental relaxation of Fermi-level pinning in high-k gate dielectric. Keywords-component; Fermi-level pinning; poly-Si gates; metal silicidegates; 0vacancy; 0interstitial; high-kdielectrics; interface dipoles; theory;flatbandvoltageshift I. INTRODUCTIO...
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日期:2024-07-10
The widening of this work-function pinning-free-region is the key issue for the fundamental relaxation of Fermi-level pinning in high-k gate dielectric Published in: Simulation of Semiconductor Processes and Devices, 2006 International Conference on Date ...
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi leve
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日期:2024-07-11
We have studied Fermi level pinning (FLP) of Hf-based high-k gate stacks based on thermodynamics based on an O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium. O exposure to aim O vacancy ......
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi leve
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日期:2024-07-13
Numerous metal oxides have been studied worldwide as possible high-k gate dielectric candidates for MOS devices on alternative semiconductor materials (Ge, III/ ... On HCl-cleaned GaAs, the Hf-content in the first HfCl 4 /H 2 O reaction cycle is not repro...
IEEE Xplore Abstract - Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiS
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日期:2024-07-08
Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a criti...