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  Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate----
  
  Author(s): Yang, ZC (Yang, Z. C.); Huang, AP (Huang, A. P.); Zheng, XH (Zheng, X. H.); Xiao, ZS (Xiao, Z. S.); Liu, XY (Liu, X. Y.); Zhang, XW (Zhang, X. W.); Chu, PK (Chu, Paul K.); Wang, WW (Wang, W. W.) Title: Fermi-Level Pinning at Metal/High-k Interf
  
  2024-07-08
  
  瀏覽：1105
- www.freepatentsonline.com
  
  NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and
  
  NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric ... The Fermi-pinning effect of high k gate dielectric materials causes a threshold voltage shift and low mobility, due to the incre
  
  2024-07-08
  
  瀏覽：656

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Gate Stacks With High-k Dielectrics and Metal Electrodes: Fermi Level Pinning and Dipoles Induced by

日期：2024-07-13

Manhong Zhang, Ph.D.: studied high-k gate dielectrics and metal gate electrodes at University of Texas at Austin, Texas, United States. Professor at Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. Current research is high-k die...

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Theory of Fermi Level Pinning of High-k Dielectrics - IEEE Xplore

日期：2024-07-10

Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been systematically ......

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High-k/Metal Gate Technology

日期：2024-07-08

9 Jan 2008 ... Too large high-k cause significant short channel effect ..... Flat-band shift due to Fermi Level Pinning....

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Presentation

日期：2024-07-14

Fermi level pinning and mobility degradation. 12. Conclusions. New Materials for the Gate Stack of MOS-Transistors. 2 ......

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$the role of metal \ high-k dielectric interfaces in ... - Sematech$

the role of metal \ high-k dielectric interfaces in ... - Sematech

日期：2024-07-14

Leading material for high performance applications (k=20-25) ... ϕ. CNL. Effective workfunction & Fermi level pinning ......

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Effects of high-k gate dielectric materials on metal and silicon gate ...

日期：2024-07-14

high- dielectrics differ appreciably from their values on SiO2 or in a vacuum. We also .... illustrates the case where the metal Fermi level is above ... 2(a) illustrates the varying degrees of pinning of metal ......

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