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日期:2024-10-13
Simple interface by command control. CLE. Sy stem. Bu s. NAND. Flash. I/O1 - I/O8 ... NAND vs. NOR - Cell Structure. Word line. Bit line. Source line. Unit Cell....
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日期:2024-10-10
This technical note discusses the basics of NAND Flash and demonstrates its .... Word line. Source line. Contact. Unit Cell. Bit line. 2F. 2F. Cell Array. NAND....
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日期:2024-10-13
to distinguish between NAND and NOR Flash memories. This book is ... Wordline. Bitline. PAD. Fig. 2.3. NAND Flash memory floorplan. 2.2.2 Basic operations....
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日期:2024-10-09
The two main types of flash memory are the NOR Flash & NAND Flash. .... The word line WL is the horizontal line and bit line BL is the vertical line (shown in Fig ......
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日期:2024-10-14
Flash memory can be divided into NOR- and NAND-based memory2.1[35]. ... If one of the word lines is brought high, the related floating gate transistor pulls the ......
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日期:2024-10-10
NAND flash, is widely used in consumer electronics products, such as ..... to a word-line while for NAND flash, the FGTs are connected in series (see Figure 2.2)....
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日期:2024-10-10
這些cell 以8 個或者16 個為單位,連成bit line,形成所謂的byte(x8)/word(x16),這就是NAND Device 的位寬。這些Line 會再組成Page. (Nand Flash 有多種結構,我 ......
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日期:2024-10-14
Low Stress Program and Single Wordline Erase Schemes for NAND Flash Memory. Jin-Ki Kim, Hong-Beom Pyeon, HakJune Oh, Roland Schuetz and Peter ......