search:p i n二極體相關網頁資料

      • en.wikipedia.org
        A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-type, inside a single crystal of semiconductor. It is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a la
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      • ecee.colorado.edu
        When calculating the current in a p-n diode one needs to know the carrier density and the electric field throughout the p-n diode which can then be used to obtain the drift and diffusion current. Unfortunately, this requires the knowledge of the quasi-Fer
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    日期:2024-09-03
    The full-depletion approximation assumes that the depletion region around the metallurgical junction has well-defined edges. It also assumes that the transition between the depleted and the quasi-neutral region is abrupt. We define the quasi-neutral regio...
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    日期:2024-09-10
    p-n junction diodes are made up of two adjacent pieces of p-type and n-type semiconducting materials. p-type and n-type materials are simply semiconductors, such as silicon (Si) or germanium (Ge), with atomic impurities; the type of impurity present deter...
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    日期:2024-09-03
    Follow us at: https://plus.google.com/+tutorvista/ Check us out at http://www.tutorvista.com/content/phy... P n Junction Diode A pn junction is known as semiconductor diode. A pn junction is said to be formed only when a bonding force is created between t...
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    日期:2024-09-08
    P-N junction diode is the most fundamental and the simplest electronics device. When one side of an intrinsic semiconductor is doped with acceptor i.e, one side is made p-type by doping with n-type material, a p-n junction diode is formed. This is a two t...
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    日期:2024-09-08
    Diodes, Inc. has a full range of complementary pair (N+P) MOSFETs for easy online purchase. Visit us online today to find the products you need. ... High Quality Solutions in Discrete, Logic, and Analog Semiconductor Solutions Diodes Incorporated offers t...
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    日期:2024-09-07
    2014年3月19日 - PIN二極體(高頻二極體)的原理及特性介紹PIN二極體(高頻二極體)的原理 ... pin二極體實際上是靜態結電容很小的一種用應在高頻開關方面的特殊二 ......
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    日期:2024-09-10
    Operating up to 3 GHz with high-voltage handling capabilities, NXP's PIN diodes are ideal for a wide range of mobile communications and RF applications....
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    日期:2024-09-08
    受光二極體的中間i層為空乏區,其厚度經設計可獲得最佳量子效率及響應速率,這也是PIN 受光二極體的最大優點。通常其受光表面有一層抗反射膜,以增加量子效率 ......