search:pocket implant相關網頁資料

- www.perioimplantservices.com
  
  Perio Implant Services | Keep your teeth for life
  
  Keep Your Teeth. For Life. by providing the highest quality evidence-based periodontal and dental implant treatment
  
  2024-08-29
  
  瀏覽：1075
- ieeexplore.ieee.org
  
  Pocket Implantation Effect on Drain Current Flicker Noise in ...
  
  for a pocket doping effect is proposed. In our model, the local threshold voltage and the width of the pocket implant region are extracted from the measured ...
  
  2024-09-03
  
  瀏覽：498

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Study of pocket implant parameters for 0.18 µm CMOS

日期：2024-08-30

of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear opti-....

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何謂reverse short-channel effect - Yahoo!奇摩知識+

日期：2024-08-31

2007年3月14日 - 最常見的一個例子是，為了要減輕短通道效應，以NMOS 為例，我們會在N+ 區域的角落打上P-type 的implant，叫做pocket implant，當通道長度越 ......

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Short-Channel Effect Improved by Lateral Channel ...

日期：2024-09-02

theoretical optimal pocket implant performance is to achieve an. Lmin approximately ... FET without pocket implant, which is a significant (over one technology ......

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9.2 Short Channel Effect Reduction with Pocket Implants

日期：2024-08-31

9.2 Short Channel Effect Reduction with Pocket Implants....

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下載 - 國立中央大學

日期：2024-08-28

界電壓下降，目前最常使用抑制的方式為口袋式佈植(Pocket Implant)去提高基板 ... Implant)較高影響，如P 型矽鍺通道用於源極/汲極的口袋式佈植可能為砷或銦二....

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µ - 國立雲林科技大學

日期：2024-09-02

of pocket implant on device characteristics. We have also derived a drain current model for linear and saturated regions. The validity of this model has been....

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Effective Channel Length Extraction of MOS Transistors with ...

日期：2024-09-03

values of Leff generated by this method are more reasonable than the original shift-and-ratio method. Keywords: Effective channel length, halo/pocket implant, ......

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tcad simulation of using pocket implant in 50nm n-mosfets

日期：2024-09-01

2004年11月21日 - In this paper, the effectiveness of pocket implant to suppress the short channel effect is studied using. TCAD simulation for 50 nm physical gate ......

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