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日期:2024-08-30
of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear opti-....
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日期:2024-08-31
2007年3月14日 - 最常見的一個例子是,為了要減輕短通道效應,以NMOS 為例,我們會在N+ 區域的角落打上P-type 的implant,叫做pocket implant,當通道長度越 ......
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日期:2024-09-02
theoretical optimal pocket implant performance is to achieve an. Lmin approximately ... FET without pocket implant, which is a significant (over one technology ......
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日期:2024-08-31
9.2 Short Channel Effect Reduction with Pocket Implants....
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日期:2024-08-28
界電壓下降,目前最常使用抑制的方式為口袋式佈植(Pocket Implant)去提高基板 ... Implant)較高影響,如P 型矽鍺通道用於源極/汲極的口袋式佈植可能為砷或銦二....
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日期:2024-09-02
of pocket implant on device characteristics. We have also derived a drain current model for linear and saturated regions. The validity of this model has been....
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日期:2024-09-03
values of Leff generated by this method are more reasonable than the original shift-and-ratio method. Keywords: Effective channel length, halo/pocket implant, ......
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日期:2024-09-01
2004年11月21日 - In this paper, the effectiveness of pocket implant to suppress the short channel effect is studied using. TCAD simulation for 50 nm physical gate ......