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Diffusion of Impurities & Dopants in Silicon, Gallium Arsenide, & Other Semiconductors
瀏覽:1155
日期:2024-08-01
Enter the annealing temperature: [ C] (900 to 1350) Enter the annealing time: [min] (1 to 600) Enter the substrate depth: [µm] (0 to 10) the impurity concentration at the specified substrate depth [cm-3]...看更多