fermi energy of aluminum的相關公司資訊
ENEE 313, Spr. ’09 Supplement I Intrinsic and Extrinsic Semiconductors, Fermi-Dirac Distribution Fun

ENEE 313, Spr. ’09 Supplement I Intrinsic and Extrinsic Semiconductors, Fermi-Dirac Distribution Fun

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日期:2024-07-13
At room temperature, relatively few electrons have enough thermal energy to make this jump. In fact, approximately one electron per 6.9×1012 silicon atoms does. So the intrinsic carrier concentration in silicon at room temperature is approximately n i = 1...看更多