Depinning of the Fermi level at the Ge Schottky interface through Se treatment

Depinning of the Fermi level at the Ge Schottky interface through Se treatment

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日期:2024-07-07
Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottk ... Figure 1 shows the I–V characteristics of Al contacts to n- and p-type Ge with and without...看更多