Presented By: Ashesh Jain Indian Institute of Technology, Delhi

Presented By: Ashesh Jain Indian Institute of Technology, Delhi

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日期:2024-08-31
Feasible electrode metal for pmos: Pt and conducting metal oxide RuO ₂ Current roadmap predicts that poly- Si gate technology likely be phased out beyond the 70 nm node, after which a metal gate substitute ......看更多