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NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and
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日期:2024-07-09
NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric ... The Fermi-pinning effect of high k gate dielectric materials causes a threshold voltage shift and low mobility, due to the incre...看更多