Hashizume, Tamotsu Issue Date - 北海道大学学術成果コレクション : HUSCAP

Hashizume, Tamotsu Issue Date - 北海道大学学術成果コレクション : HUSCAP

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日期:2024-07-09
Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy Tamotsu Hashizumea) Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan ~Received 3 ......看更多