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Oxide-based Electric Devices - University of Florida
瀏覽:1485
日期:2024-07-25
Plan to do. Channel : IZO or IGZO or SIZO. Gate dielectrics : SiO2, SiNx, Sc2O3. Large Area Depletion Mode TFTs. IZO film : Carrier concentration ~1018 cm-3....看更多