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Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate
瀏覽:547
日期:2026-04-17
During the process of heteroepitaxial growth, if the lattice constant of the growing film differs from that of the substrate, the wafer surface bows, regardless of whether the lattice mismatch occurs or not. As the growth in large-scale wafers speeds up, ...看更多

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